The M4N25 device consists of a gallium arsenide infrared emitting diode
optically coupled to a silicon NPN phototransistor detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications

M4N25管脚引脚定义说明：

PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE

M4N25内部结构图

Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing
• Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

M4N25封装尺寸

Package Dimensions in Inches (mm)