| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| 1N5070 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
 |
| 1N5069 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
|
| 1N5067 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
|
| 1N5066 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
|
| 1N5065 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
|
| 1N5064 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
|
| 1N5063 |
POWER ZENERS |
115.95K |
MICROSEMI [Microsemi Corporation] |
|
| 1N5062 |
Passivated Rectifier |
204.16K |
POWEREX [Powerex Power Semiconductors] |
|
| 1N5061 |
Passivated Rectifier |
204.16K |
POWEREX [Powerex Power Semiconductors] |
|
| 1N5060 |
Passivated Rectifier |
204.16K |
POWEREX [Powerex Power Semiconductors] |
|
| 1N5059 |
Passivated Rectifier |
204.16K |
POWEREX [Powerex Power Semiconductors] |
|
| 1N5062GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
64.18K |
GE [General Semiconductor] |
|
| 1N5062 |
GLASS PASSIVATED JUNCTION RECTIFIER |
52.73K |
GE [General Semiconductor] |
|
| 1N5061GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
64.18K |
GE [General Semiconductor] |
|
| 1N5061 |
GLASS PASSIVATED JUNCTION RECTIFIER |
52.73K |
GE [General Semiconductor] |
|
| 1N5060GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
64.18K |
GE [General Semiconductor] |
|
| 1N5060 |
GLASS PASSIVATED JUNCTION RECTIFIER |
52.73K |
GE [General Semiconductor] |
|
| 1N5059GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
64.18K |
GE [General Semiconductor] |
|
| 1N5062 |
Standard silicon rectifier diodes |
129.43K |
SEMIKRON [Semikron International] |
|
| 1N5061 |
Standard silicon rectifier diodes |
129.43K |
SEMIKRON [Semikron International] |
|
|
|
|
