| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| 2N3019UB |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
31.35K |
SEMICOA [Semicoa Semiconductor] |
 |
| 2N3019S |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
31.35K |
SEMICOA [Semicoa Semiconductor] |
|
| 2N3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
31.35K |
SEMICOA [Semicoa Semiconductor] |
|
| 2N3019S |
LOW POWER NPN SILICON TRANSISTOR |
71.18K |
MICROSEMI [Microsemi Corporation] |
|
| 2N3019 |
LOW POWER NPN SILICON TRANSISTOR |
71.18K |
MICROSEMI [Microsemi Corporation] |
|
| 2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
19.77K |
SEME-LAB [Seme LAB] |
|
| 2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
67.65K |
STMICROELECTRONICS [STMicroelectronics] |
|
| 2N3019 |
GENERAL TRANSISTOR NPN SILICON |
138.36K |
BOCA [Boca Semiconductor Corporation] |
|
| 2N3019 |
NPN SILICON TRANSISTOR |
17.62K |
SEME-LAB [Seme LAB] |
|
| 2N3019 |
NPN SILICON PLANAR TRANSISTOR |
135.58K |
SIEMENS [Siemens Semiconductor Group] |
|
| 2N3019 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
184.87K |
CDIL [Continental Device India Limited] |
|
| 2N3019 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
144.22K |
MICRO-ELECTRONICS [Micro Electronics] |
|
| 2N3019 |
NPN medium power transistor |
51.71K |
PHILIPS [Philips Semiconductors] |
|
| 2N3019 |
Small Signal Transistors |
55.84K |
CENTRAL [Central Semiconductor Corp] |
|
| 2N3019S |
Type 2N3019S Geometry 4500 Polarity NPN |
45.96K |
SEMICOA [Semicoa Semiconductor] |
|
| 2N3019 |
Type 2N3019 Geometry 4500 Polarity NPN |
45.53K |
SEMICOA [Semicoa Semiconductor] |
|
|
|
|
