| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| 2N6083 |
silicon transistors UHF/VHF power transistors |
245K |
ETC [ETC] |
 |
| 2N6082 |
silicon transistors UHF/VHF power transistors |
245K |
ETC [ETC] |
|
| 2N6081 |
silicon transistors UHF/VHF power transistors |
245K |
ETC [ETC] |
|
| 2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
279K |
MICROSEMI [Microsemi Corporation] |
|
| 2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
279K |
MICROSEMI [Microsemi Corporation] |
|
| 2N6082 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
279K |
MICROSEMI [Microsemi Corporation] |
|
| 2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
279K |
MICROSEMI [Microsemi Corporation] |
|
| 2N6076 |
SILICON PNP SMALL SIGNAL TRANSISTOR |
18K |
FAIRCHILD [Fairchild Semiconductor] |
|
| 2N6075A |
Sensitive Gate Triacs |
119K |
ONSEMI [ON Semiconductor] |
|
| 2N6075A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
118K |
MOTOROLA [Motorola, Inc] |
|
| 2N6078 |
NPN MULTI-EPITAXIAL POWER TRANSISTOR |
17K |
SEME-LAB [Seme LAB] |
|
| 2N6079 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
10K |
SEME-LAB [Seme LAB] |
|
| 2N6077 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
10K |
SEME-LAB [Seme LAB] |
|
| 2N6076 |
Small Signal Transistors |
22K |
CENTRAL [Central Semiconductor Corp] |
|
| 2N6033 |
NPN POWER SILICON TRANSISTOR |
66.21K |
MICROSEMI [Microsemi Corporation] |
|
| 2N6032 |
NPN POWER SILICON TRANSISTOR |
66.21K |
MICROSEMI [Microsemi Corporation] |
|
| 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS |
290.18K |
GESS [GE Solid State] |
|
| 2N6032 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS |
290.18K |
GESS [GE Solid State] |
|
| 2N6099 |
NPN SILICON TRANSISTOR |
71.78K |
CENTRAL [Central Semiconductor Corp] |
|
| 2N6080 |
silicon transistors UHF/VHF power transistors |
245.31K |
ETC [ETC] |
|
|
|
|
