| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| 2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
279.16K |
MICROSEMI [Microsemi Corporation] |
 |
| 2N6075B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
118.13K |
MOTOROLA [Motorola, Inc] |
|
| 2N6073B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
118.13K |
MOTOROLA [Motorola, Inc] |
|
| 2N6073A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
118.13K |
MOTOROLA [Motorola, Inc] |
|
| 2N6071B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
118.13K |
MOTOROLA [Motorola, Inc] |
|
| 2N6073B |
Sensitive Gate Triacs |
119.61K |
ONSEMI [ON Semiconductor] |
|
| 2N6073A |
Sensitive Gate Triacs |
119.61K |
ONSEMI [ON Semiconductor] |
|
| 2N6071B |
Sensitive Gate Triacs |
119.61K |
ONSEMI [ON Semiconductor] |
|
| 2N6073B |
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
81.16K |
CENTRAL [Central Semiconductor Corp] |
|
| 2N6073A |
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
81.16K |
CENTRAL [Central Semiconductor Corp] |
|
| 2N6071B |
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS |
81.16K |
CENTRAL [Central Semiconductor Corp] |
|
| 2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
190.17K |
ONSEMI [ON Semiconductor] |
|
| 2N6058 |
Darlington Complementary Silicon Power Transistors |
130.66K |
ONSEMI [ON Semiconductor] |
|
| 2N6052 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
190.17K |
ONSEMI [ON Semiconductor] |
|
| 2N6052 |
Darlington Complementary Silicon Power Transistors |
130.66K |
ONSEMI [ON Semiconductor] |
|
| 2N6036 |
MIDIUM POWER DAR;OMGTONS |
174.73K |
STMICROELECTRONICS [STMicroelectronics] |
|
| 2N6035 |
MIDIUM POWER DAR;OMGTONS |
174.73K |
STMICROELECTRONICS [STMicroelectronics] |
|
| 2N6034 |
MIDIUM POWER DAR;OMGTONS |
174.73K |
STMICROELECTRONICS [STMicroelectronics] |
|
| 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS |
291K |
|
|
| 2N6059 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
195.37K |
BOCA [Boca Semiconductor Corporation] |
|
|
|
|
