| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| BSM300GB120DLC |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C) |
179503K |
Eupec |
 |
| BSM200GB120DL |
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
128.3K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM200GB120 |
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
128.3K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
112.89K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
112.38K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
111.4K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
130.98K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
131.29K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values |
77.11K |
EUPEC [eupec GmbH] |
|
| BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
114.05K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
132.18K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
130.93K |
SIEMENS [Siemens Semiconductor Group] |
|
| BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
110.27K |
SIEMENS [Siemens Semiconductor Group] |
|
| B1201U |
solid state crowbar devices |
1877.05K |
TECCOR [Teccor Electronics] |
|
| B1200C |
solid state crowbar devices |
1877.05K |
TECCOR [Teccor Electronics] |
|
| B1200CC |
DO-214AA Package Symbolization |
97.52K |
LITTELFUSE [Littelfuse] |
|
| B1200CA |
DO-214AA Package Symbolization |
97.52K |
LITTELFUSE [Littelfuse] |
|
| B120B |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
57.78K |
DIODES [Diodes Incorporated] |
|
| B120 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
57.78K |
DIODES [Diodes Incorporated] |
|
| B120 |
1 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
648.23K |
FUJI [Fuji Electric] |
|
|
|
|
