| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
359.34K |
SIEMENS [Siemens Semiconductor Group] |
 |
| BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
43.75K |
SIEMENS [Siemens Semiconductor Group] |
|
| BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
33.42K |
SIEMENS [Siemens Semiconductor Group] |
|
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