| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| BF998RW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
155.83K |
VISAY [Vishay Siliconix] |
 |
| BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
155.83K |
VISAY [Vishay Siliconix] |
|
| BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
155.83K |
VISAY [Vishay Siliconix] |
|
| BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
155.83K |
VISAY [Vishay Siliconix] |
|
| BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
155.83K |
VISAY [Vishay Siliconix] |
|
| BF998R |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
155.83K |
VISAY [Vishay Siliconix] |
|
| BF998R |
Silicon N-Channel MOSFET Tetrode |
249.05K |
INFINEON [Infineon Technologies AG] |
|
| BF998R |
Silicon N-channel dual-gate MOS-FETs |
114.27K |
PHILIPS [Philips Semiconductors] |
|
| BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
33.45K |
SIEMENS [Siemens Semiconductor Group] |
|
|
|
|
