| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| BSS138 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
138.1K |
SIEMENS [Siemens Semiconductor Group] |
 |
| BSS138W |
SIPMOS Small-Signal-Transistor |
196.07K |
INFINEON [Infineon Technologies AG] |
|
| BSS138N |
SIPMOS Small-Signal-Transistor |
230.2K |
INFINEON [Infineon Technologies AG] |
|
| BSS138DW |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
58.79K |
DIODES [Diodes Incorporated] |
|
| BSS138 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
125.66K |
FAIRCHILD [Fairchild Semiconductor] |
|
| BSS138 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
58.78K |
ZETEX [Zetex Semiconductors] |
|
| BSS138W-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
90.54K |
DIODES [Diodes Incorporated] |
|
| BSS138W |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
90.54K |
DIODES [Diodes Incorporated] |
|
| BSS138-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
92.3K |
DIODES [Diodes Incorporated] |
|
| BSS138 |
N-Channel Enhancement Mode Field Effect Transistor |
481.32K |
CET [Chino-Excel Technology] |
|
| BSS138 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
92.3K |
DIODES [Diodes Incorporated] |
|
| BSS138LT3G |
Power MOSFET 200 mA, 50 V |
79.38K |
ONSEMI [ON Semiconductor] |
|
| BSS138LT3 |
Power MOSFET 200 mA, 50 V |
79.38K |
ONSEMI [ON Semiconductor] |
|
| BSS138LT1G |
Power MOSFET 200 mA, 50 V |
79.38K |
ONSEMI [ON Semiconductor] |
|
| BSS138LT1 |
Power MOSFET 200 mA, 50 V |
79.38K |
ONSEMI [ON Semiconductor] |
|
|
|
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