| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF841FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
334.39K |
STMICROELECTRONICS [STMicroelectronics] |
 |
| IRF841 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
334.39K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF841 |
TRANSISTORS N-CHANNEL |
544.88K |
IRF [International Rectifier] |
|
| IRF841 |
N-Channel Power MOSFETs, 8A, 450 V/500V |
150.37K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF841 |
N-CHANNEL POWER MOSFETS |
272.29K |
SAMSUNG [Samsung semiconductor] |
|
| IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
146.97K |
MOTOROLA [Motorola, Inc] |
|
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