| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF9530-220M |
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
18.47K |
SEME-LAB [ Seme LAB ] |
 |
| IRF9530 |
P-CHANNEL POWER MOSFETS |
378.27K |
SAMSUNG [ Samsung semiconductor ] |
|
| IRF9530 |
TRANSISTORS |
449.2K |
IRF [International Rectifier] |
|
| IRF9530 |
P-CHANNEL POWER MOSFETS |
508.31K |
SAMSUNG [Samsung semiconductor] |
|
| IRF9530 |
P-CHANNEL POWER MOSFETS |
378.27K |
SAMSUNG [Samsung semiconductor] |
|
| IRF9530SMD |
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
22.71K |
SEME-LAB [Seme LAB] |
|
| IRF9530S |
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
22.71K |
SEME-LAB [Seme LAB] |
|
| IRF9530-220M |
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
18.47K |
SEME-LAB [Seme LAB] |
|
| IRF9530NSTRR |
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
173.15K |
IRF [International Rectifier] |
|
| IRF9530NS |
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
173.15K |
IRF [International Rectifier] |
|
| IRF9530NL |
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
173.15K |
IRF [International Rectifier] |
|
| IRF9530N |
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
113.13K |
IRF [International Rectifier] |
|
| IRF9530 |
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs |
63.6K |
INTERSIL [Intersil Corporation] |
|
|
|
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