型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRFZ24NS |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 17A I(D) | TO-263AB |
543.38K |
International Rectifier |
 |
IRFZ24VL |
HEXFET? POWER MOSFET |
126812K |
|
 |
IRFZ24VS |
HEXFET? POWER MOSFET |
126812K |
|
 |
IRFZ24 |
HEXFET? POWER MOSFET |
170104K |
|
 |
IRFZ24L |
HEXFET Power MOSFET |
361K |
IRF [International Rectifier] |
 |
IRFZ24V |
Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) |
200.81K |
IRF [International Rectifier] |
 |
IRFZ24NS |
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) |
159.21K |
IRF [International Rectifier] |
 |
IRFZ24NL |
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) |
159.21K |
IRF [International Rectifier] |
 |
IRFZ24N |
Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A) |
123.82K |
IRF [International Rectifier] |
 |
IRFZ24N |
N-channel enhancement mode TrenchMOS transistor |
64.86K |
PHILIPS [Philips Semiconductors] |
 |
IRFZ24S |
HEXFET Power MOSFET |
361.55K |
IRF [International Rectifier] |
 |
IRFZ24NSPBF |
HEXFET Power MOSFET |
670.82K |
IRF [International Rectifier] |
 |
IRFZ24NLPBF |
HEXFET Power MOSFET |
670.82K |
IRF [International Rectifier] |
 |
|
|