型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRG4BC20KD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
222.96K |
IRF [International Rectifier] |
 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
222.96K |
IRF [International Rectifier] |
 |
IRG4BC20KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
199.06K |
IRF [International Rectifier] |
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