| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRG4BC30KD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
225K |
IRF [International Rectifier] |
 |
| IRG4BC30KD-STRR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
225.23K |
IRF [International Rectifier] |
|
| IRG4BC30W-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) |
188.51K |
IRF [International Rectifier] |
|
| IRG4BC30S-S |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) |
152.77K |
IRF [International Rectifier] |
|
| IRG4BC30U-S |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) |
308.22K |
IRF [International Rectifier] |
|
| IRG4BC30UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
234.03K |
IRF [International Rectifier] |
|
| IRG4BC30US |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) |
308.22K |
IRF [International Rectifier] |
|
| IRG4BC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
167.86K |
IRF [International Rectifier] |
|
| IRG4BC30W |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) |
139.38K |
IRF [International Rectifier] |
|
| IRG4BC30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) |
161.89K |
IRF [International Rectifier] |
|
| IRG4BC30FD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
412.64K |
IRF [International Rectifier] |
|
| IRG4BC30SS |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) |
152.77K |
IRF [International Rectifier] |
|
| IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) |
188.51K |
IRF [International Rectifier] |
|
| IRG4BC30K-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
161.85K |
IRF [International Rectifier] |
|
| IRG4BC30KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
161.85K |
IRF [International Rectifier] |
|
| IRG4BC30KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
225.23K |
IRF [International Rectifier] |
|
| IRG4BC30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
137.95K |
IRF [International Rectifier] |
|
| IRG4BC30KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
196.13K |
IRF [International Rectifier] |
|
| IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
167.27K |
IRF [International Rectifier] |
|
| IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
412.64K |
IRF [International Rectifier] |
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