| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR |
38095K |
|
 |
| IRGBC40K-S |
INSULATED GATE BIPOLAR TRANSISTOR |
115819K |
|
 |
| IRGBC40S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) |
249.57K |
IRF [International Rectifier] |
 |
| IRGBC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) |
248.18K |
IRF [International Rectifier] |
 |
| IRGBC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) |
248.18K |
IRF [International Rectifier] |
 |
| IRGBC40K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A) |
237.32K |
IRF [International Rectifier] |
 |
| IRGBC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A) |
237.32K |
IRF [International Rectifier] |
 |
| IRGBC40M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) |
88.62K |
IRF [International Rectifier] |
 |
| IRGBC40U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A) |
244K |
IRF [International Rectifier] |
 |
|
|
|