| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| K4S161622D-TC/L80 |
512K x 16Bit x 2 Banks Synchronous DRAM |
1127.62K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TC/L70 |
512K x 16Bit x 2 Banks Synchronous DRAM |
1127.62K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TC/L60 |
512K x 16Bit x 2 Banks Synchronous DRAM |
1127.62K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TC/L55 |
512K x 16Bit x 2 Banks Synchronous DRAM |
1127.62K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TC/L10 |
512K x 16Bit x 2 Banks Synchronous DRAM |
1127.62K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D |
512K x 16Bit x 2 Banks Synchronous DRAM |
1127.62K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TI/E80 |
1M x 16 SDRAM |
680.82K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TI/E70 |
1M x 16 SDRAM |
680.82K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TI/E60 |
1M x 16 SDRAM |
680.82K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TI/E55 |
1M x 16 SDRAM |
680.82K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TI/E50 |
1M x 16 SDRAM |
680.82K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S161622D-TI/E10 |
1M x 16 SDRAM |
680.82K |
SAMSUNG [Samsung semiconductor] |
 |
|
|
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