| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
52.96K |
SIEMENS [Siemens Semiconductor Group] |
 |
| BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
51.96K |
SIEMENS [Siemens Semiconductor Group] |
|
| BF1005W |
Silicon N-Channel MOSFET Tetrode |
252.08K |
INFINEON [Infineon Technologies AG] |
|
| BF1005SW |
Silicon N-Channel MOSFET Tetrode |
252.41K |
INFINEON [Infineon Technologies AG] |
|
| BF1005SR |
Silicon N-Channel MOSFET Tetrode |
252.41K |
INFINEON [Infineon Technologies AG] |
|
| BF1005S |
Silicon N-Channel MOSFET Tetrode |
252.41K |
INFINEON [Infineon Technologies AG] |
|
| BF1005R |
Silicon N-Channel MOSFET Tetrode |
252.08K |
INFINEON [Infineon Technologies AG] |
|
| BF1005 |
Silicon N-Channel MOSFET Tetrode |
252.08K |
INFINEON [Infineon Technologies AG] |
|
|
|
|
