| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
51.89K |
SIEMENS [Siemens Semiconductor Group] |
 |
| BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
33.34K |
SIEMENS [Siemens Semiconductor Group] |
|
| BF1009SR |
Silicon N-Channel MOSFET Tetrode |
251.35K |
INFINEON [Infineon Technologies AG] |
|
| BF1009S |
Silicon N-Channel MOSFET Tetrode |
251.35K |
INFINEON [Infineon Technologies AG] |
|
|
|
|
