| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF530 |
N-CHANNEL POWER MOSFETS |
354.19K |
SAMSUNG [ Samsung semiconductor ] |
 |
| IRF530/D |
TMOS POWER FET 14 AMPERES |
170607K |
|
|
| IRF530/D |
TMOS POWER FET 14 AMPERES |
177330K |
|
|
| IRF530 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
180K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF530 |
N-CHANNEL POWER MOSFETS |
354K |
SAMSUNG [Samsung semiconductor] |
|
| IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
157K |
MOTOROLA [Motorola, Inc] |
|
| IRF530 |
N-Channel Power MOSFETs Avalanche Energy Rated |
390K |
HARRIS [Harris Corporation] |
|
| IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
47K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
47K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF530NL |
HEXFET Power MOSFET |
618K |
IRF [International Rectifier] |
|
| IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
481K |
TRSYS [TRSYS] |
|
| IRF530 |
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
281K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF530 |
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) |
175K |
IRF [International Rectifier] |
|
| IRF530FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
187K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF530 |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
187K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF530R |
N-Channel Power MOSFETs Avalanche Energy Rated |
390.01K |
HARRIS [Harris Corporation] |
|
| IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
77.58K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF530S |
HEXFET Power MOSFET |
171.61K |
IRF [International Rectifier] |
|
| IRF5305PBF |
HEXFET Power MOSFET |
179.17K |
IRF [International Rectifier] |
|
| IRF530PBF |
Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements |
3556.87K |
IRF [International Rectifier] |
|
|
|
|
