型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRF530N |
N-channel TrenchMOS transistor |
97.02K |
PHILIPS [Philips Semiconductors] |
 |
IRF5305S |
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) |
171.24K |
IRF [International Rectifier] |
 |
IRF5305L |
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) |
171.24K |
IRF [International Rectifier] |
 |
IRF5305 |
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) |
124.32K |
IRF [International Rectifier] |
 |
IRF530N |
Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A) |
212.77K |
IRF [International Rectifier] |
 |
IRF530S |
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) |
180.1K |
IRF [International Rectifier] |
 |
IRF530NS |
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
618.07K |
IRF [International Rectifier] |
 |
IRF530L |
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
618.07K |
IRF [International Rectifier] |
 |
IRF530A |
Advanced Power MOSFET |
254.86K |
FAIRCHILD [Fairchild Semiconductor] |
 |
IRF530N |
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET |
125.62K |
INTERSIL [Intersil Corporation] |
 |
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