| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF531 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
180K |
FAIRCHILD [Fairchild Semiconductor] |
 |
| IRF531 |
N-CHANNEL POWER MOSFETS |
354K |
SAMSUNG [Samsung semiconductor] |
|
| IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
157K |
MOTOROLA [Motorola, Inc] |
|
| IRF531 |
N-Channel Power MOSFETs Avalanche Energy Rated |
390K |
HARRIS [Harris Corporation] |
|
| IRF531FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
47K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF531 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
47K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF531 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
70K |
SUTEX [Supertex, Inc] |
|
| IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
187K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF531 |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
187K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF531R |
N-Channel Power MOSFETs Avalanche Energy Rated |
390.01K |
HARRIS [Harris Corporation] |
|
|
|
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