| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF9130 |
P-CHANNEL POWER MOSFETS |
508.31K |
SAMSUNG [Samsung semiconductor] |
 |
| IRF9130SMD |
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
20.72K |
SEME-LAB [Seme LAB] |
|
| IRF9130 |
P-CHANNEL POWER MOSFET |
19.15K |
SEME-LAB [Seme LAB] |
|
| IRF9130 |
TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) |
149.67K |
IRF [International Rectifier] |
|
| IRF9130 |
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
58.5K |
INTERSIL [Intersil Corporation] |
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