型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRFZ44NPBF |
HEXFET-R Power MOSFET |
151K |
IRF [International Rectifier] |
|
IRFZ44L |
HEXFET Power MOSFET |
327K |
IRF [International Rectifier] |
|
IRFZ44S |
HEXFET Power MOSFET |
327K |
IRF [International Rectifier] |
|
IRFZ44 |
N-CHANNEL POWER MOSFETS |
197.79K |
SAMSUNG [Samsung semiconductor] |
|
IRFZ44NS |
N-channel enhancement mode TrenchMOS transistor |
70.53K |
PHILIPS [Philips Semiconductors] |
|
IRFZ44N |
N-channel enhancement mode TrenchMOS transistor |
64.28K |
PHILIPS [Philips Semiconductors] |
|
IRFZ44 |
N-channel enhancement mode TrenchMOS transistor |
64.28K |
PHILIPS [Philips Semiconductors] |
|
IRFZ44V |
Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) |
229.74K |
IRF [International Rectifier] |
|
IRFZ44VS |
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) |
145.04K |
IRF [International Rectifier] |
|
IRFZ44VL |
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) |
145.04K |
IRF [International Rectifier] |
|
IRFZ44VZS |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
298.5K |
IRF [International Rectifier] |
|
IRFZ44VZL |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
298.5K |
IRF [International Rectifier] |
|
IRFZ44VZ |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
298.5K |
IRF [International Rectifier] |
|
IRFZ44R |
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) |
153.64K |
IRF [International Rectifier] |
|
IRFZ44ES |
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) |
163.26K |
IRF [International Rectifier] |
|
IRFZ44EL |
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) |
163.26K |
IRF [International Rectifier] |
|
IRFZ44E |
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) |
96.06K |
IRF [International Rectifier] |
|
IRFZ44N |
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) |
100.57K |
IRF [International Rectifier] |
|
IRFZ44 |
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) |
100.57K |
IRF [International Rectifier] |
|
IRFZ44ZS |
Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) |
333.19K |
IRF [International Rectifier] |
|
|
|