| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRG4BC20S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
157.98K |
IRF [International Rectifier] |
 |
| IRG4BC20SD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
382.72K |
IRF [International Rectifier] |
|
| IRG4BC20SDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
382.72K |
IRF [International Rectifier] |
|
| IRG4BC20SD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
287.8K |
IRF [International Rectifier] |
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