型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRG4BC30FD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
412.64K |
IRF [International Rectifier] |
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IRG4BC30F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
167.27K |
IRF [International Rectifier] |
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