型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRG4BC30U-S |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) |
308.22K |
IRF [International Rectifier] |
|
IRG4BC30UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
234.03K |
IRF [International Rectifier] |
|
IRG4BC30US |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) |
308.22K |
IRF [International Rectifier] |
|
IRG4BC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
167.86K |
IRF [International Rectifier] |
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