| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRG4BC30W-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) |
188.51K |
IRF [International Rectifier] |
 |
| IRG4BC30W |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) |
139.38K |
IRF [International Rectifier] |
|
| IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) |
188.51K |
IRF [International Rectifier] |
|
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|
|
|
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