型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRG4PH20KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
276.79K |
IRF [International Rectifier] |
|
IRG4PH20K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
229.85K |
IRF [International Rectifier] |
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