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型号 简要描述 文件大小 厂家 PDF K4S561632H K4S561632H 4M x 16Bit x 4 Banks SDRAM 199.27K Samsung  K4S561632C-TC75 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 117190K SAMSUNG  K4S561632E-UL75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 198.76K SAMSUNG [Samsung semiconductor]  K4S561632E-UL60 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 198.76K SAMSUNG [Samsung semiconductor]  K4S561632E-UC75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 198.76K SAMSUNG [Samsung semiconductor]  K4S561632E-UC60 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 198.76K SAMSUNG [Samsung semiconductor]  K4S561632D-TC/L7C 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 60.89K SAMSUNG [Samsung semiconductor]  K4S561632D-TC/L75 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 60.89K SAMSUNG [Samsung semiconductor]  K4S561632D-TC/L60 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 60.89K SAMSUNG [Samsung semiconductor]  K4S561632D-TC/L1L 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 60.89K SAMSUNG [Samsung semiconductor]  K4S561632D-TC/L1H 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 60.89K SAMSUNG [Samsung semiconductor]  K4S561632E-TC60 256Mb E-die SDRAM Specification 198.75K SAMSUNG [Samsung semiconductor]  K4S561632E-TL75 256Mb E-die SDRAM Specification 198.75K SAMSUNG [Samsung semiconductor]  K4S561632E 256Mb E-die SDRAM Specification 54pin sTSOP-II 207.41K SAMSUNG [Samsung semiconductor]  K4S561632B-TC/L1H 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 131.61K SAMSUNG [Samsung semiconductor]  K4S561632E-TL60 256Mb E-die SDRAM Specification 198.75K SAMSUNG [Samsung semiconductor]  K4S561632E-TC75 256Mb E-die SDRAM Specification 198.75K SAMSUNG [Samsung semiconductor]  K4S561632B-TC/L1L 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 131.61K SAMSUNG [Samsung semiconductor]  K4S561632A-TC/L1H 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 127.17K SAMSUNG [Samsung semiconductor]  K4S561632A-TC/L80 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 127.17K SAMSUNG [Samsung semiconductor]                  共27条记录分2页显示 首页前页12后页尾页

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