| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| K4S561632A-TC/L75 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
127.17K |
SAMSUNG [Samsung semiconductor] |
 |
| K4S561632E |
256Mb E-die SDRAM Specification |
198.75K |
SAMSUNG [Samsung semiconductor] |
|
| K4S561632B-TC/L75 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
131.61K |
SAMSUNG [Samsung semiconductor] |
|
| K4S561632B |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
131.61K |
SAMSUNG [Samsung semiconductor] |
|
| K4S561632D |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
60.89K |
SAMSUNG [Samsung semiconductor] |
|
| K4S561632A |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
127.17K |
SAMSUNG [Samsung semiconductor] |
|
| K4S561632A-TC/L1L |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
127.17K |
SAMSUNG [Samsung semiconductor] |
|
|
|
|
