| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| MJD117/L |
EPITAXIAL PLANAR PNP TRANSISTOR |
32K |
KEC |
 |
| MJD117L |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
394.75K |
KEC [KEC(Korea Electronics)] |
|
| MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
394.75K |
KEC [KEC(Korea Electronics)] |
|
| MJD117 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
84.64K |
STMICROELECTRONICS [STMicroelectronics] |
|
| MJD117T4 |
Complementary Darlington Power Transistors |
147.74K |
ONSEMI [ON Semiconductor] |
|
| MJD117G |
Complementary Darlington Power Transistors |
147.74K |
ONSEMI [ON Semiconductor] |
|
| MJD117-001 |
Complementary Darlington Power Transistors |
147.74K |
ONSEMI [ON Semiconductor] |
|
| MJD117 |
Complementary Darlington Power Transistors |
147.74K |
ONSEMI [ON Semiconductor] |
|
|
|
|
