| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| TIP112 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors |
49.25K |
FAIRCHILD [Fairchild Semiconductor] |
 |
| TIP112 |
NPN SILICON POWER DARLINGTONS |
101.68K |
POINN [Power Innovations Limited] |
|
| TIP112 |
Plastic Medium-Power |
252K |
MOTOROLA [Motorola, Inc] |
|
| TIP112 |
Plastic Medium-Power Complementary Silicon Transistors |
269.51K |
ONSEMI [ON Semiconductor] |
|
| TIP112 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
153.15K |
BOCA [Boca Semiconductor Corporation] |
|
| TIP112 |
POWER TRANSISTORS(2.0A,60-100V,50W) |
146.97K |
MOSPEC [Mospec Semiconductor] |
|
| TIP112 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
72.23K |
STMICROELECTRONICS [STMicroelectronics] |
|
| TIP112 |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
269.51K |
MOTOROLA [Motorola, Inc] |
|
| TIP112F |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
41.37K |
KEC [KEC(Korea Electronics)] |
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
74.82K |
KEC [KEC(Korea Electronics)] |
|
| TIP112 |
Mini size of Discrete semiconductor elements |
500.55K |
ETC [ETC] |
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