| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| TIP146T |
Monolithic Construction With Built In Base-Emitter Shunt Resistors |
52.16K |
FAIRCHILD [Fairchild Semiconductor] |
 |
| TIP146F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors |
62.18K |
FAIRCHILD [Fairchild Semiconductor] |
|
| TIP146 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors |
51.66K |
FAIRCHILD [Fairchild Semiconductor] |
|
| TIP146F |
PNP (HIGH DC CURRENT GAIN) |
175.17K |
SAMSUNG [Samsung semiconductor] |
|
| TIP146 |
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
234.87K |
MOTOROLA [Motorola, Inc] |
|
| TIP146 |
PNP SILICON POWER DARLINGTONS |
625.55K |
TRSYS [TRSYS] |
|
| TIP146 |
PNP SILICON POWER DARLINGTONS |
114.29K |
POINN [Power Innovations Limited] |
|
| TIP146T |
POWER TRANSISTORS(10A,60-100V,80W) |
204.61K |
MOSPEC [Mospec Semiconductor] |
|
| TIP146 |
POWER TRANSISTORS(10A,60-100V,125W) |
204.6K |
MOSPEC [Mospec Semiconductor] |
|
| TIP146 |
SILICON DARLINGTON TRANSISTOR PNP EPITAXIAL(HIGH DC CURRENT GAIN) |
26.97K |
WINGS [Wing Shing Computer Components] |
|
| TIP146 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
48.21K |
STMICROELECTRONICS [STMicroelectronics] |
|
| TIP146 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
217.86K |
ONSEMI [ON Semiconductor] |
|
|
|
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