Caution: thisdevice is sensitive to electrostatic discharge. 用户s should follow esDhandling 程序.
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www.dynexsemi.com
FEATURES
•
10µs short circuit withst和
•
N在 punch through silicon
•
Isolated copper baseplate
•
Lead free 构建
APPLICATIONS
•
High power 反相器
•
Motor controllers
The 电源line range of high power modules
包含s half bridge, chopper, dual, single 和 bi-
directional switch 配置s covering 电压
from600v to 3300V一个d currents up to 2400a.
The dim400dds12-a000 is一个 dual switch 1200v, n
channel enhancement mode, insulated gate 双极
transistor (igbt) module. the igbThas一个 宽
reverse bias safe operating area (rbsoa) plus 全部
10
µ
s short circuit 承受.
The module 包含s 一个n electrically isolated
base 加设护板 和 low inductance 构建 enabling
circuit设计者s to optimise circuit 布局s和
utilise grounded heat 下沉s for 安全.
ORDERINg 信息
或者der 作:
DIM400DDS12-a000
便条: when 订货, please 美国e the 全部的 part number.
.
Key 参数
V
CES
1200V
V
Ce (sat)
*
(典型值) 2.2v
I
C
(max) 400A
I
c(pk)
(最大值) 800A
*
(measured 一个t the powerbusbars一个d非t the auxiliary terminals)
图.1 dual switch circuit 图解
输出line 类型 code: d
(see 包装 details for 更远 informati在)
图.2 electrical connecti在s (非t to规模)
DIM400dds12-一个000
Dual switch igbt
单元
DS5841-1.1 六月e2005(ln24046)
: 点此下载
