DIM800DDS12-A000_集成电路资料查询网

SEMICONDUCTOR
DIM800DDS12-a000
Caution: thisdevice is sensitive to electrostatic discharge. 用户s should follow esDhandling 程序s
3
/
9
www.dynexsemi.com
THERMAl 一个nd mechanical 比率
Internal insulati在 材料: Al
2
O
3
baseplate 材料: 铜
Creepage 距离: 20mm
clearance: 10mm
CTi (critical tracking index): 175
Symbol
参数 Test conditions 最小值 典型值 Max. 单位
R
th(j-c)
Thermal resistance –晶体管
(per arm)
Continuous dissipati在 –
junction to 情况
- - 18 ° c/kw
R
th(j-c)
Thermal resistance –diode (per arm)
Continuous dissipati在 –
junction to 情况
- - 40 ° c/kw
R
th(c-h)
Thermal resistance –case to 散热器
(per module)
Mounting torque 5nm
(和 mounting grease)
- - 8 ° c/kw
T
j
Junction 温度 晶体管 - - 150 ° C
二极管 - - 125 ° C
T
stg
贮存age temperature 范围 - -40 - 125 ° C
-
Screw torque
Mounting – m6 - - 5 Nm
Electrical connections– m4 - - 2 Nm
Electrical connections– m8 - - 10 Nm

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SEMICONDUCTOR DIM800DDS12-a000 Caution: thisdevice is sensitive to electrostatic discharge. 用户s should follow esDhandling 程序s 3 / 9 www.dynexsemi.com THERMAl 一个nd mechanical 比率 Internal insulati在材料: Al 2 O 3 baseplate 材料: 铜 Creepage 距离: 20mm clearance: 10mm CTi (critical tracking index): 175 Symbol 参数 Test conditions 最小值典型值 Max. 单位 R th(j-c) Thermal resistance –晶体管 (per arm) Continuous dissipati在 – junction to 情况 - - 18 ° c/kw R th(j-c) Thermal resistance –diode (per arm) Continuous dissipati在 – junction to 情况 - - 40 ° c/kw R th(c-h) Thermal resistance –case to 散热器 (per module) Mounting torque 5nm (和 mounting grease) - - 8 ° c/kw T j Junction 温度晶体管 - - 150 ° C 二极管 - - 125 ° C T stg 贮存age temperature 范围 - -40 - 125 ° C - Screw torque Mounting – m6 - - 5 Nm Electrical connections– m4 - - 2 Nm Electrical connections– m8 - - 10 Nm

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