SEMICONDUCTOR
DIM800DCS12-a000
Caution: thisdevice is sensitive to electrostatic discharge. 用户s should follow esDhandling 程序s
4
/
9
www.dynexsemi.com
ELECTRICAl 特性
T
情况
=25° Cunless 状态d otherwise.
Symbol 参数 Test conditions 最小值 典型值 Max. 单位
I
ces
Collector 截-off current V
GE
= ov, v
CE
= v
CES
- - 1 毫安
V
GE
= ov, v
CE
= v
CES
, t
情况
=125° C - - 25 毫安
I
ces
Gate 泄漏 current V
GE
= ±20V, v
CE
= 0v - - 4 µA
V
ge(th)
Gate 门槛 电压 I
C
= 40ma, v
GE
= v
CE
4.5 5.5 6.5 V
V
ce(sat)
Collector-emitter saturation 电压 V
GE
=15V, i
C
= 800a - 2.2 2.8 V
V
GE
=15V, i
C
= 800a, t
情况
= 125° C - 2.6 3.2 V
I
F
Diode 向前 current 直流 - - 800 一个
I
FM
Diode maximum forward current t
p
= 1ms - - 1600 一个
Diode 向前 voltage (igbt arm) 2.1 2.4
V
F
Diode 向前 voltage (diode arm)
I
F
= 800A -
1.8 2.1
V
2.1 2.4
Diode 向前 voltage (igbt arm)
Diode 向前 voltage (diode arm)
I
F
= 800A, t
情况
=125° C -
1.7 2.0
V
C
ies
Input 电容 V
CE
=25V, v
GE
= 0v, f= 1mhz - 90 - nF
L
M
Module inductance– per arm - - 20 - nH
R
INT
Internal resistance –per arm - - 0.27 -
m
Ω
SC
数据
Short circuit. i
sc
T
j
=125° C, v
cc
= 900v, I
1
- 5500 - 一个
t
p
≤
10µs,
V
ce(最大值)
= v
CES
- l* ×di/dt
I
2
- 4500 - 一个
IEC60747-9
便条:
✁
Measured 一个t thepower 总线柱状s 一个d 非t the auxiliary terminals
*l is the circuit inductance+ l
M
: 点此下载
