SEMICONDUCTOR
DIM400DDS12-a000
Caution: thisdevice is sensitive to electrostatic discharge. 用户s should follow esDhandling 程序s
2
/
9
www.dynexsemi.com
ABSOLUTe maximum 比率S– per arm
Stressesabove those 列表ed under ‘absolute maximum ratings’ 毫安y cause permanentdamage 至 这 设备.
In extreme 情况, 一个s with all semiconductors, this 毫安y include potentially hazardous rupture of 这
包装. appropriate safety precautions should always be followed. exposure 至 absolute maximum ratings
毫安y 一个ffectdevice reliability.
T情况=25° Cunless 状态d otherwise
Symbol 参数 Test conditions Max. 单位
V
CES
Collector-发射级 voltage V
GE
= 0v 1200 V
V
GES
门-emitter voltage ±20 V
I
C
Continuous collector current T
情况
=85° C 400 一个
I
c(pk)
Peak collector 电流 1ms, t
情况
=115° C 800 一个
P
最大值
最大值. transistorpower 消耗 T
情况
=25° C, t
j
=150° C 3470 W
I
2
t Diode i
2
t 值 V
R
= 0, t
P
=10ms, t
vj
=125° C 25 kA
2
S
V
isol
Isolation 电压–per 单元 Commoned 终端s to 根基 加设护板. 一个c rms,1 最小值,50Hz 2500 V
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