半导体 组
7 二月-10-1997
bsm 35 gd 120 d2
典型值 切换 时间
i = f (i
C
) ,
inductive 加载 , t
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
R
G
= 39
Ω
0 10 20 30 40 50 60 一个 80
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 时间
t = f (r
G
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
I
C
= 35 一个
0 20 40 60 80 100 120 140
Ω
180
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 losses
e = f (i
C
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
R
G
= 39
Ω
0 10 20 30 40 50 60 一个 80
I
C
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
典型值 切换 losses
e = f (r
G
) ,
inductive 加载
,
T
j
= 125°c
par.:
V
CE
= 600v,
V
GE
= ± 15 v,
I
C
= 35 一个
0 20 40 60 80 100 120 140
Ω
180
R
G
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff