半导体 组
7 三月-29-1996
bsm 25 gb 120 dn2
典型值 切换 时间
i = f (i
C
) ,
inductive 加载 , t
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
R
G
= 47
Ω
0 10 20 30 40 一个 60
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 时间
t = f (r
G
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
I
C
= 25 一个
0 20 40 60 80 100 120 140
Ω
180
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 losses
e = f (i
C
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
R
G
= 47
Ω
0 10 20 30 40 一个 60
I
C
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
典型值 切换 losses
e = f (r
G
) ,
inductive 加载
,
T
j
= 125°c
par.:
V
CE
= 600v,
V
GE
= ± 15 v,
I
C
= 25 一个
0 20 40 60 80 100 120 140
Ω
180
R
G
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff