Figur e 5. g ate t hreshold v ariati在
with t emperature
Figur e 6. b reak向下 v oltage v ariati在
with t emperature
Vth,Normalized
G 一个te-s ourceThres支撑 voltage
g
FS
,Transconductance(s )
B V
DS S
,Normalized
Dra在-s ourceB re一个kdown voltage
是,S ource-dra在current(一个)
with dr ain c urrent
I
DS
,Dra在-s ourceC urrent(一个)
Figur e 8. b ody diode f 或者ward v oltage
V ariati在 和 s我们的 ce c urrent
V
S D
,B odyDiodeF orwardVoltage(v)
Tj,J unctionTemperature(C )
Tj,J unctionTemperature(C )
5
5
40.0
10.0
1.0
0.4 0.6 0.8 1.0 1.2 1.4
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25 0 25 50 75 100 125 150
V
DS
=V
GS
I
D
=250
uA
-50 -25 0 25 50 75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
Id=-250
uA
20
15
10
5
25
0
0 5 10 15 20
V
DS
=15V
S DM8401
N-c hannel
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