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前
VSADJ
Y4
Z4
Y3
Z3
Y2
Z2
Y1
Z1
S1
S2
S3
hpd_下沉
scl_下沉
sda_下沉
SDA3
SCL3
SDA2
SCL2
SDA1
SCL1
HPD3
HPD2
HPD1
B31
A31
B32
A32
B33
A33
B34
A34
B21
A21
B22
A22
B23
A23
B24
A24
rx w/
EQ
rx w/
EQ
rx w/
EQ
rx w/
EQ
rx w/
EQ
rx w/
EQ
rx w/
EQ
rx w/
EQ
控制 逻辑
3−to−1 mux
TMDS
驱动
TMDS
驱动
TMDS
驱动
TMDS
驱动
rx w/
EQ
rx w/
EQ
rx w/
EQ
rx w/
EQ
V
CC
(3.3 v)
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
(3.3 v)
V
CC
(3.3 v)
A11
B11
A12
B12
A13
B13
A14
B14
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
R
INT
OE
TMDS341
SLLS660A–AUGUST2005–REVISEDOCTOBER2005
thesedeviceshavelimitedbuilt-inesdprotection.theleadsshouldbeshortedtogetherorthedevice
placedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetothemosgates.
FUNCTIONALBLOCKDIAGRAM
2
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