www.德州仪器.com
ELECTRICALCHARACTERISTICS
TPS62110
TPS62111
TPS62112
SLVS585–JULY2005
V
I
=12v,v
O
=3.3v,i
O
=600ma,en=v
I
,t
一个
=–40
°
Cto85
°
c(unlessotherwisenoted)
PARAMETERTESTCONDITIONSMINTYPMAXUNIT
SUPPLYCURRENT
V
I
inputvoltagerange3.117v
I
O
=0ma,同步=地,v
I
=7.2v,20
T
一个
=25
°
C
(1)
I
(q)
OperatingquiescentcurrentµA
I
O
=0ma,同步=地,v
I
=17V
(1)
2326
en=gnd1.55
I
(sd)
ShutdowncurrentµA
en=地,t
一个
=25
°
c,v
I
=7.2v1.53
使能
V
IH
enhigh-levelinputvoltage1.3v
V
IL
enlow-levelinputvoltage0.3v
entrip-pointhysteresis170mv
I
IKG
ENinputleakagecurrentEN=GNDorV
I
,v
I
=12v0.010.2µa
I
(en)
eninputcurrent0.6v
≤
V
(en)
≤
4V1020µA
V
(uvlo)
undervoltagelockoutthresholdinputvoltagefalling2.833.1v
Undervoltagelockouthysteresis250300mV
POWERSWITCH
V
I
≥
5.4v;i
O
=350mA165250
r
ds(在)
p-channelmosfeton-resistancev
I
=3.5v;i
O
=200mA340m
Ω
V
I
=3v;i
O
=100mA490
p-channelmosfetleakage
V
DS
=17v0.11µa
电流
p-channelmosfetcurrentlimitv
I
=7.2v,v
O
=3.3v2400ma
V
I
≥
5.4v;i
O
=350mA145200
r
ds(在)
n-channelmosfeton-resistancev
I
=3.5v;i
O
=200mA170m
Ω
V
I
=3v;i
O
=100mA200
n-channelmosfetleakage
V
DS
=17v0.12µa
电流
powergoodoutput,lbi,lbo
V
(pg)
PowergoodtripvoltageV
O
-v
1.6%
V
O
rampingpositive50
Powergooddelaytimeµs
V
O
rampingnegative200
V
OL
pg,lbooutputlowvoltagev
(fb)
=0.8
×
V
O
名义上的,i
OL
=1ma0.3v
I
OL
pg,lbosinkcurrent1ma
pg,lbooutputleakagecurrentv
(fb)
=V
O
名义上的,v
(lbi)
=V
I
0.010.25µa
Minimumsupplyvoltageforvalidpower3V
好的,lbi,lbosignal
V
LBI
lowbatteryinputtripvoltageinputvoltagefalling1.256v
ILBILBIinputleakagecurrent10100nA
lowbatteryinputtrip-要点
1.5%
精度
V
lbi,hys
Lowbatteryinputhysteresis25mV
振荡器
f
S
Oscillatorfrequency90010001100kHz
f
(同步)
synchronizationrangecmos-logicclocksignalonsyncpin8001400khz
V
IH
synchigh-levelinputvoltage1.5v
V
IL
synclow-levelinputvoltage0.3v
(1)deviceisnotswitching.
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