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TPS54010
SLVS509–MAY2004
electricalcharacteristics(持续)
T
J
=-40
°
Cto125
°
c,vin=3vto4v,pvin=2.2vto4v(unlessotherwisenoted)
PARAMETERTESTCONDITIONSMINTYPMAXUNIT
ERRORAMPLIFIER
Erroramplifieropenloopvoltagegain1k
Ω
COMPtoAGND
(4)
90110dB
Parallel10k
Ω
,160pfcompto
Erroramplifierunitygainbandwidth35MHz
AGND
(4)
ErroramplifiercommonmodeinputvoltagerangePoweredbyinternalLDO
(4)
0VBIASV
inputbiascurrent,vsensevsense=v
ref
60250nA
outputvoltageslewrate(symmetric),comp11.4v/µs
PWMCOMPARATOR
pwmcomparatorpropagationdelaytime,pwm
10-mvoverdrive
(4)
7085ns
comparatorinputtophpin(excludingdeadtime)
慢-开始/使能
enablethresholdvoltage,ss/ena0.821.21.4v
enablehysteresisvoltage,ss/ena
(4)
0.03v
fallingedgedeglitch,ss/ena
(4)
2.5µs
internalslow-starttime2.43.134.1s
chargecurrent,ss/enass/ena=0v258µa
ss/ena=0.2v,vin=2.7v,
dischargecurrent,ss/ena1.324ma
pvin=2.5v
POWERGOOD
PowergoodthresholdvoltageVSENSEfalling93%V
ref
Powergoodhysteresisvoltage
(4)
3%V
ref
Powergoodfallingedgedeglitch
(4)
35µs
outputsaturationvoltage,pwrgdi
(下沉)
=2.5ma0.180.3v
leakagecurrent,pwrgdvin=3.3v,pvin=2.5v1µa
CURRENTLIMIT
vin=3.3v,pvin=2.5v(1)
(4)
,
currentlimit14.521a
Outputshorted
Currentlimitleadingedgeblankingtime
(4)
100ns
Currentlimittotalresponsetime
(4)
200ns
THERMALSHUTDOWN
Thermalshutdowntrippoint
(4)
135150165
°
C
Thermalshutdownhysteresis
(4)
10
°
C
OUTPUTPOWERMOSFETS
vin=3v,pvin=2.5v820
r
ds(在)
PowerMOSFETswitchesm
Ω
vin=3.6v,pvin=2.5v820
(4)specifiedbydesign
4
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