MUN5211T1 SERIES
2
motorola small–signal 晶体管, fets 和 二极管 设备 数据
电的 特性
(t
一个
= 25
°
c 除非 否则 指出)
典型的
标识 最小值 Typ 最大值 单位
止 特性
集电级-根基 截止 电流 (v
CB
= 50 v, i
E
= 0) I
CBO
— — 100 nAdc
集电级-发射级 截止 电流 (v
CE
= 50 v, i
B
= 0) I
CEO
— — 500 nAdc
发射级-根基 截止 电流 MUN5211T1
(v
EB
= 6.0 v, i
C
= 0) MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
集电级-根基 损坏 电压 (i
C
= 10
µ
一个, i
E
= 0) V
(br)cbo
50 — — Vdc
集电级-发射级 损坏 电压
(3)
(i
C
= 2.0 毫安, i
B
= 0) V
(br)ceo
50 — — Vdc
在 特性
(3)
直流 电流 增益 MUN5211T1
(v
CE
= 10 v, i
C
= 5.0 毫安) MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
—
—
—
—
—
—
—
—
—
—
—
集电级-发射级 饱和 电压 (i
C
= 10 毫安, i
B
= 0.3 毫安)
(i
C
= 10 毫安, i
B
= 5 毫安) mun5230t1/mun5231t1
(i
C
= 10 毫安, i
B
= 1 毫安) mun5215t1/mun5216t1
mun5232t1/mun5233t1/mun5234t1
V
ce(sat)
— — 0.25 Vdc
输出 电压 (在)
(v
CC
= 5.0 v, v
B
= 2.5 v, r
L
= 1.0 k
Ω
) MUN5211lT1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
(v
CC
= 5.0 v, v
B
= 3.5 v, r
L
= 1.0 k
Ω
) MUN5213T1
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
3. 脉冲波 测试: 脉冲波 宽度 < 300
µ
s, 职责 循环 < 2.0%
: 点此下载
