www.德州仪器.com
ELECTRICALCHARACTERISTICS
TPS65020
SLVS607–SEPTEMBER2005
vindcdc1=vindcdc2=vindcdc3=vcc=vinldo=3.6v,vbackup=3v,t
一个
=–40
°
Cto85
°
c,typicalvaluesare
atT
一个
=25
°
c(unlessotherwisenoted)
PARAMETERTESTCONDITIONSMINTYPMAXUNIT
VLDO1andVLDO2LOWDROPOUTREGULATORS
V
I
inputvoltagerangeforldo1,21.56.5v
V
O
ldo1outputvoltagerange13.3v
V
O
ldo2outputvoltagerange1.03.3v
maximumoutputcurrentforldo1,
I
O
50mA
LDO2
ldo1andldo2shortcircuitcur-
I
(sc)
vldo1=地,vldo2=gnd400ma
rentlimit
minimumvoltagedropatldo1,
I
O
=50ma,vinldo=1.8v120mv
LDO2
minimumvoltagedropatldo1,
I
O
=50ma,vinldo=1.5v65150mv
LDO2
outputvoltageaccuracyforldo1,
I
O
=10mA–2%1%
LDO2
vinldo1,2=vldo1,2+0.5v(最小值.
lineregulationforldo1,ldo2–1%1%
2.5v)to6.5v,i
O
=10mA
loadregulationforldo1,ldo2i
O
=0mAto50mA–1%1%
regulationtimeforldo1,ldo2loadchangefrom10%to90%10
µ
s
analogicsignalsdefdcdc1,defdcdc2,defdcdc3
V
IH
highlevelinputvoltage1.3vccv
V
IL
lowlevelinputvoltage00.4v
I
H
inputbiascurrent0.0010.05
µ
一个
logicsignalspb_在;铅_输出
Lowleveloutputvoltageat
V
OL
I
OL
=20ma0.5v
铅_输出
V
OH
highleveloutputvoltagepb_out6v
V
IL
lowlevelinputvoltagepb_in0.4v
V
IH
highlevelinputvoltagepb_in1.3vcc
(1)
V
iiinputleakagecurrentpb_in1
µ
一个
THERMALSHUTDOWN
T
(sd)
ThermalshutdownIncreasingjunctiontemperature160
°
C
ThermalshudownhysteresisDecreasingjunctiontemperature20
°
C
INTERNALUNDERVOLTAGELOCKOUT
uvlointernaluvlovccfalling–2%2.352%v
internaluvlocomparatorhyster-
V
(uvlo_hyst)
120mV
esis
VOLTAGEDETECTORCOMPARATORS
Comparatorthreshold
fallingthreshold–1%1.01%v
(pwrfail_sns,lowbat_sns)
Hysteresis405060mV
Propagationdelay25mVoverdrive10
µ
s
POWERGOOD
vdcdc1,vdcdc2,vdcdc3,vldo1,
V
(pgoodf)
–12%–10%–8%
vldo2,减少
vdcdc1,vdcdc2,vdcdc3,vldo1,
V
(pgoodr)
–7%–5%–3%
vldo2,增加
(1)theinputvoltagecangoashighas6v.iftheinputvoltageexceedsvcc,aninputcurrentof(v
(铅_在)
-0.7v-vcc)/10krflows.
9
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