©2002 仙童 半导体 公司 isl9v5036s3s / isl9v5036p3 / isl9v5036s3 rev. c1, 九月 2002
isl9v5036s3s / isl9v5036p3 / isl9v5036s3
额外的刺激 热的 模型
rev 1 将 2002
isl9v5036s3s / isl9v3536p3 / isl9v5036s3
ctherm1 th 6 4.0e2
ctherm2 6 5 3.6e-3
ctherm3 5 4 4.9e-2
ctherm4 4 3 3.2e-1
ctherm5 3 2 3.0e-1
ctherm6 2 tl 1.6e-2
rtherm1 th 6 1.0e-2
rtherm2 6 5 1.4e-1
rtherm3 5 4 1.0e-1
rtherm4 4 3 9.0e-2
rtherm5 3 2 9.4e-2
rtherm6 2 tl 1.9e-2
saber 热的 模型
saber 热的 模型
isl9v5036s3s / isl9v5036p3 / isl9v5036s3
template 热的_模型 th tl
热的_c th, tl
{
ctherm.ctherm1 th 6 = 4.0e2
ctherm.ctherm2 6 5 = 3.6e-3
ctherm.ctherm3 5 4 = 4.9e-2
ctherm.ctherm4 4 3 = 3.2e-1
ctherm.ctherm5 3 2 = 3.0e-1
ctherm.ctherm6 2 tl = 1.6e-2
rtherm.rtherm1 th 6 = 1.0e-2
rtherm.rtherm2 6 5 = 1.4e-1
rtherm.rtherm3 5 4 = 1.0e-1
rtherm.rtherm4 4 3 = 9.0e-2
rtherm.rtherm5 3 2 = 9.4e-2
rtherm.rtherm6 2 tl = 1.9e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
接合面
情况