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资料编号:886836
 
资料名称:SN74LVC1G80DBVR
 
文件大小: 657K
   
说明
 
介绍:
SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP
 
 


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本平台电子爱好着纯手工中文简译:截至2020/5/17日,支持英文词汇500个
www.德州仪器.com
特性
dbv 或者 dck pACKAGE
(t运算 视图)
1
2
3
5
4
D
CLK
V
CC
Q
3
2
1
4
5
CLK
D
Q
V
CC
yea, yep, yza, 或者 yzp pACKAGE
(bottom 视图)
描述/orderinginformation
SN74LVC1G80
singlepositive-边缘-triggeredd-typeflip-flop
SCES221O–APRIL1999–REVISEDJUNE2005
AvailableintheTexasInstruments
NanoStar™andNanoFree™Packages
supports5-vv
CC
运作
inputsacceptvoltagesto5.5v
Maxt
pd
of4.2nsat3.3v
lowpowerconsumption,10-
µ
AMaxI
CC
•±
24-maoutputdriveat3.3v
I
supportspartial-电源-downmode
运作
获得-upperformanceexceeds100maper
jesd78,classii
ESDProtectionExceedsJESD22
–2000-vhuman-bodymodel(a114-一个)
–200-vmachinemodel(a115-一个)
–1000-vcharged-devicemodel(c101)
thissinglepositive-边缘-triggeredd-typeflip-flopisdesignedfor1.65-vto5.5-vv
CC
运作.
whendataatthedata(d)inputmeetsthesetuptimerequirement,thedataistransferredtotheqoutputonthe
积极的-goingedgeoftheclockpulse.clocktriggeringoccursatavoltagelevelandisnotdirectlyrelatedtothe
risetimeoftheclockpulse.followingthehold-timeinterval,dataatthedinputcanbechangedwithoutaffecting
thelevelattheoutput.
nanostar™andnanofree™packagetechnologyisamajorbreakthroughinicpackagingconcepts,usingthe
dieasthepackage.
thisdeviceisfullyspecifiedforpartial-电源-downapplicationsusingi
.thei
circuitrydisablestheoutputs,
preventingdamagingcurrentbackflowthroughthedevicewhenitispowereddown.
ORDERINGINFORMATION
T
一个
包装
(1)
orderablepartnumbertop-sidemarking
(2)
nanostar™–wcsp(dsbga)
SN74LVC1G80YEAR
0.17-mmsmallbump–yea
nanofree™–wcsp(dsbga)
SN74LVC1G80YZAR
0.17-mmsmallbump–yza(铅-自由)
reelof3000___cx_
nanostar™–wcsp(dsbga)
SN74LVC1G80YEPR
0.23-mmlargebump–yep
–40°Cto85°C
nanofree™–wcsp(dsbga)
SN74LVC1G80YZPR
0.23-mmlargebump–yzp(铅-自由)
Reelof3000SN74LVC1G80DBVR
sot(sot-23)–dbvc80_
Reelof250SN74LVC1G80DBVT
Reelof3000SN74LVC1G80DCKR
sot(sc-70)–dckcx_
Reelof250SN74LVC1G80DCKT
(1)packagedrawings,standardpackingquantities,thermaldata,符号化,andpcbdesignguidelinesareavailableat
www.德州仪器.com/sc/包装.
(2)dbv/dck:theactualtop-sidemarkinghasoneadditionalcharacterthatdesignatestheassembly/testsite.
yea/yza,yep/yzp:theactualtop-sidemarkinghasthreeprecedingcharacterstodenoteyear,month,andsequencecode,andone
followingcharactertodesignatetheassembly/testsite.pin1identifierindicatessolder-bumpcomposition(1=snpb,
=铅-自由).
pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsoftexas
instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
nanostar,nanofreearetrademarksoftexasinstruments.
productiondatainformationiscurrentasofpublicationdate.
copyright©1999–2005,texasinstrumentsincorporated
ProductsconformtospecificationsperthetermsoftheTexas
instrumentsstandardwarranty.productionprocessingdoesnot
necessarilyincludetestingofallparameters.
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