| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRG4PH50UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
229.82K |
IRF [International Rectifier] |
 |
| IRG4PH50 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
229.82K |
IRF [International Rectifier] |
|
| IRG4PH50KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
224.72K |
IRF [International Rectifier] |
|
| IRG4PH50S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A) |
130.71K |
IRF [International Rectifier] |
|
| IRG4PH50U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
134.14K |
IRF [International Rectifier] |
|
| IRG4PH50K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
92.62K |
IRF [International Rectifier] |
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