| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF820AS |
Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) |
133.58K |
IRF [International Rectifier] |
 |
| IRF820B |
500V N-Channel MOSFET |
858.42K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF820 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET |
54.37K |
INTERSIL [Intersil Corporation] |
|
| IRF820AL |
Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) |
133.58K |
IRF [International Rectifier] |
|
| IRF820A |
Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) |
100.33K |
IRF [International Rectifier] |
|
| IRF820S |
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A) |
172.4K |
IRF [International Rectifier] |
|
| IRF820 |
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A) |
169.68K |
IRF [International Rectifier] |
|
| IRF820 |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
157.18K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF820 |
N-CHANNEL POWER MOSFETS |
322.92K |
SAMSUNG [Samsung semiconductor] |
|
| IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
140.22K |
MOTOROLA [Motorola, Inc] |
|
| IRF820 |
N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET |
92.75K |
STMICROELECTRONICS [STMicroelectronics] |
|
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