www.德州仪器.com
FEATURESDESCRIPTION
产品
函数的 图解
8
2
3
4
7
6
V
CC
一个
B
V
BB
Y
Z
2Gbps
2
23
- 1 prbs
V
CC
= 3.3 v
V
ID
= 200 mv
V
IC
= 1.2 v
horizontal 规模= 200 ps/div
Vert.规模= 200 mv/div
EYE模式
1GHz
SN65Lvds100 和 sn65lVDS101
2
3
7
6
一个
B
Y
Z
110
Ω
SN65Lvdt100 和 sn65lVDT101
sn65lvds100,sn65lvdt100
sn65lvds101,sn65lvdt101
SLLS516C–AUGUST2002–REVISEDJUNE2004
differentialtranslator/repeater
•
DesignedforSignalingRates
(1)
≥
2Gbps
thesn65lvds100,sn65lvdt100,sn65lvds101,
andsn65lvdt101areahigh-speeddifferentialre-
•
totaljitter<65ps
ceiveranddriverconnectedasarepeater.这
•
低-poweralternativeforthemc100ep16
receiveracceptslow-voltagedifferentialsignaling
•
low100ps(最大值)部分-至-partskew
(lvds),积极的-发射级-coupledlogic(pecl),orcur-
•
25mVofReceiverInputThresholdHysteresis
rent-modelogic(cml)inputsignalsatratesupto2
GbpsandrepeatsitaseitheranLVDSorPECL
over0-vto4-vcommon-moderange
outputsignal.thesignalpaththroughthedeviceis
•
inputselectricallycompatiblewithlvpecl,
differentialforlowradiatedemissionsandminimal
cml,andlvdssignallevels
addedjitter.
•
3.3-vsupplyoperation
TheoutputsoftheSN65LVDS100and
•
lvdtintegrates110-
Ω
TerminatingResistor
SN65LVDT100areLVDSlevelsasdefinedby
•
OfferedinSOICandMSOP
tia/eia-644-一个.theoutputsofthesn65lvds101
andsn65lvdt101arecompatiblewith3.3-vpecl
水平.bothdrivedifferentialtransmissionlineswith
nominally100-
Ω
characteristicimpedance.
•
622MHzCentralOfficeClockDistribution
•
高-speednetworkrouting
TheSN65LVDT100andSN65LVDT101includea
110-
Ω
differentiallineterminationresistorforless
•
WirelessBasestations
boardspace,fewercomponents,andtheshortest
•
LowJitterClockRepeater
stublengthpossible.theydonotincludethev
BB
•
SerdesLVPECLOutputtoFPGALVDS
voltagereferencefoundintheSN65LVDS100and
InputTranslator
sn65lvds101.v
BB
providesavoltagereferenceof
typically1.35vbelowv
CC
foruseinreceiving
单独的-endedinputsignalsandisparticularlyuseful
withsingle-ended3.3-vpeclinputs.whennotused,
V
BB
shouldbeunconnectedoropen.
(1)thesignalingrateofalineisthenumberofvoltage
Alldevicesarecharacterizedforoperationfrom
transitionsthataremadepersecondexpressedintheunits
bps(bitspersecond).–40
°
Cto85
°
c.
pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsoftexas
instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
unlessotherwisenotedthisdocumentcontainspro-
copyright©2002–2004,texasinstrumentsincorporated
ductiondatainformationcurrentasofpublicationdate.prod-
uctsconformtospecificationsperthetermsofTexasInstruments
standardwarranty.productionprocessingdoesnotnecessarily
includetestingofallparameters.